The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Apr. 13, 2017
Applicant:
Crossbar, Inc., Santa Clara, CA (US);
Inventors:
Sundar Narayanan, Cupertino, CA (US);
Zhen Gu, Cupertino, CA (US);
Natividad Vasquez, San Francisco, CA (US);
Assignee:
Crossbar, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1683 (2013.01); H01L 45/08 (2013.01); H01L 45/124 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/1608 (2013.01);
Abstract
Two-terminal memory devices can be formed in dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of material from a metal layer. A stack of layers of the two-terminal memory device can be covered with a liner layer that can comprise the dielectric material. Thus, in some implementations, the liner layer and the blocking layer can have a similar etch rate.