Scott Brad Herner

This inventor holds 126 USPTO granted patents and 18 published patent applications and 3 EPO patents, primarily in 3D NOR Memory Arrays (CPC class H01L27-11582). Top assignees: Sunrise Memory Corporation, Crossbar, Inc., Sandisk 3D LLC. Active years: 2001-2026.

USPTO Granted Patents = 126 (Patent Applications = 18)

% Patents Active = 73.0

EPO Patents = 3 (Patent Applications = 15)

Average Co-Inventor Count = 1.6

ph-index = 15

Forward Citations = 1,025(Granted Patents)

Forward Citations (Not Self Cited) = 801(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Palo Alto, CA (US) (2001 - 2006)
Santa Clara, CA (US) (2016)
San Jose, CA (US) (2010 - 2018)
Lafayette, CO (US) (2017 - 2023)
Portland, OR (US) (2020 - 2024)

Company Filing History:

38 out of 142

Sunrise Memory Corporation

Applied Materials, Inc.

patents

7. 1 out of 145

Matrix Semiconductor, Inc.

patents

8. 1 out of 4,917

Sandisk Technologies Inc.

patents

9. 1 out of 834,307

Other

patents

Years Active: 2001-2026

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Areas of Expertise:

Thin Film Transistor

3D Memory Array

Wafer Bonding

Charge-Trapping Layer

High-Bandwidth Memory

NOR-Type Memory

Vertical Architecture

Modular Memory Units

Antimony-Doped Silicon

Memory Fabrication

Staggered Word Line

Pixel Selection

126 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733168 - 3-dimensional NOR memory array with very fine pitch: device and method (2026-09-08),

2. 12462873 - Thin film storage transistor with silicon oxide nitride charge trapping layer (2025-11-04),

3. 12406966 - Device with embedded high-bandwidth, high-capacity memory using wafer bonding (2025-09-02),

4. 12324159 - Vertical thin-film transistor and application as bit-line connector for 3-dimensional memory arrays (2025-06-03),

5. 12295143 - Methods for forming multilayer horizontal NOR-type thin-film memory strings (2025-05-06),

6. 12256547 - Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array (2025-03-18),

7. 12150304 - Methods for forming multi-layer vertical NOR-type memory string arrays (2024-11-19),

8. 12068286 - Device with embedded high-bandwidth, high-capacity memory using wafer bonding (2024-08-20),

9. 12052867 - 3-dimensional NOR memory array with very fine pitch: device and method (2024-07-30),

10. 11968837 - Staggered word line architecture for reduced disturb in 3-dimensional nor memory arrays (2024-04-23),

11. 11937424 - Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same (2024-03-19),

12. 11923341 - Memory device including modular memory units and modular circuit units for concurrent memory operations (2024-03-05),

13. 11910612 - Process for forming a vertical thin-film transistor that serves as a connector to a bit-line of a 3-dimensional memory array (2024-02-20),

14. 11844217 - Methods for forming multi-layer vertical nor-type memory string arrays (2023-12-12),

15. 11800716 - Method for in situ preparation of antimony-doped silicon and silicon germanium films (2023-10-24),

Title: The Innovative Journey of Scott Brad Herner: Pioneering Memory Technologies

Introduction: Scott Brad Herner, a visionary inventor based in San Jose, California, has left an indelible mark on the field of memory technologies with his prolific innovations and patent portfolio.

Latest Patents: Among his latest patents is the "Staggered word line architecture for reduced disturb in 3-dimensional nor memory arrays," which revolutionizes memory cell architecture by optimizing memory cell density and reducing potential disturbances. Another breakthrough is the "Thin-film storage transistors in a 3-dimensional array of nor memory strings," showcasing his mastery in fabricating advanced memory structures.

Career Highlights: Scott Brad Herner's impactful contributions have been shaped through his tenure at leading companies such as Crossbar, Inc. and Sunrise Memory Corporation. His expertise and inventive spirit have been instrumental in driving advancements in the memory technology domain.

Collaborations: Throughout his career, Scott collaborated with esteemed professionals such as Eli Harari and Wu-Yi Henry Chien, enriching his innovative journey with diverse perspectives and collective expertise.

Conclusion: In conclusion, Scott Brad Herner stands as a trailblazing inventor whose groundbreaking work in memory technologies continues to shape the landscape of the industry. His dedication to pushing the boundaries of innovation serves as an inspiration to aspiring inventors and tech enthusiasts worldwide.