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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Matrix Semiconductor, Inc.


USPTO Granted Patents = 145

Forward Citations = 12,393

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57 inventors (with patents filed for the assignee):

goldMedal Roy E Scheuerlein (45 out of 270 patents)

silverMedal James Montague Cleeves (31 out of 146 patents)

bronzeMedal Mark G Johnson (25 out of 64 patents)

4.  Michael A Vyvoda (22 out of 30 patents)

5.  N Johan Knall (21 out of 41 patents)

6.  Christopher S Moore (21 out of 32 patents)

7.  Thomas H Lee (16 out of 72 patents)

8.  Andrew J Walker (15 out of 89 patents)

9.  Bendik Kleveland (14 out of 34 patents)

10.  Vivek Subramanian (13 out of 69 patents)

11.  Roger March (13 out of 17 patents)

12.  S Brad Herner (13 out of 95 patents)

13.  J James Tringali (12 out of 22 patents)

14.  Alper Ilkbahar (11 out of 52 patents)

15.  Derek Bosch (9 out of 20 patents)


Core Competencies:
Three-Dimensional Memory
Nonvolatile Memory
Memory Array
Charge Pump Circuit
Integrated Circuit
Memory Device
Write-Once Memory
Transistor Layout
High-Density Memory
File System Structures
Semiconductor Device
Programmable Memory

145 patents:

1. 7177169 - Word line arrangement having multi-layer word line segments for three-dimensional memory array (2007-02-13),
2. 7149119 - System and method of controlling a three-dimensional memory (2006-12-12),
3. 7106652 - Word line arrangement having multi-layer word line segments for three-dimensional memory array (2006-09-12),
4. 7062602 - Method for reading data in a write-once memory device using a write-many file system (2006-06-13),
5. 7054219 - Transistor layout configuration for tight-pitched memory array lines (2006-05-30),
6. 7051251 - Method for storing data in a write-once memory array using a write-many file system (2006-05-23),
7. 7049678 - Diverse band gap energy level semiconductor device (2006-05-23),
8. 7026212 - Method for making high density nonvolatile memory (2006-04-11),
9. 7023739 - NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same (2006-04-04),
10. 7023260 - Charge pump circuit incorporating corresponding parallel charge pump stages and method therefor (2006-04-04),
11. 7022572 - Manufacturing method for integrated circuit having disturb-free programming of passive element memory cells (2006-04-04),
12. 7018878 - Metal structures for integrated circuits and methods for making the same (2006-03-28),
13. 7012299 - Storage layer optimization of a nonvolatile memory device (2006-03-14),
14. 7009275 - Method for making high density nonvolatile memory (2006-03-07),
15. 7005730 - Memory module having interconnected and stacked integrated circuits (2006-02-28),
Matrix Semiconductor, Inc. is a semiconductor company that specializes in the design and manufacturing of non-volatile memory products. With a focus on innovative solutions, Matrix Semiconductor delivers high-performance memory devices for a wide range of industries including consumer electronics, automotive, and industrial applications. Visit our website to learn more about our cutting-edge memory solutions and how they can optimize your products' performance.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 30 2025

145 Patents

#33 in Santa Clara, CA

#602 in California

#2,608 in US

#5,473 in the World

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Santa Clara, CA, United States of America

Matrix Semiconductor, Inc.

Forward Citations = 12,393

57 inventors:

goldMedal Roy E Scheuerlein (45 out of 270 patents)

silverMedal James Montague Cleeves (31 out of 146 patents)

bronzeMedal Mark G Johnson (25 out of 64 patents)

4.  Michael A Vyvoda (22 out of 30 patents)

5.  N Johan Knall (21 out of 41 patents)

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