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Alper Ilkbahar

This inventor holds 52 USPTO granted patents and 2 published patent applications and 3 EPO patents, primarily in Memory Technology (CPC class 326 ). Top assignees: Intel Corporation, Sandisk 3D LLC, Matrix Semiconductor, Inc.. Active years: 1996-2018.

USPTO Granted Patents = 52 (Patent Applications = 2)

% Patents Active = 84.6

EPO Patents = 3 (Patent Applications = 2)

Average Co-Inventor Count = 2.4

ph-index = 23

Forward Citations = 2,289(Granted Patents)

Forward Citations (Not Self Cited) = 2,260(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Santa Clara, CA (US) (2001)
Santa Cruz, CA (US) (1996 - 2003)
San Jose, CA (US) (2000 - 2018)

Company Filing History:

Matrix Semiconductor, Inc.

patents

4. 1 out of 4,930

Sandisk Technologies Inc.

patents

Years Active: 1996-2018

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Areas of Expertise:

Volatile Memory

Resistive Memory Element

Three-Dimensional Memory

Carbon-Based Memory

Semiconductor Devices

NAND Memory Array

Programmable Memory

Redundant Memory Structure

High Density Memory

Electro-Static Discharge

Dynamic Bit Inversion

Slew Rate Control

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9953697 - Volatile memory device employing a resistive memory element (2018-04-24),

2. 8659028 - Three-dimensional memory device incorporating segmented array line memory array (2014-02-25),

3. 8637870 - Three-dimensional memory device incorporating segmented array line memory array (2014-01-28),

4. 8536015 - Memory cell that includes a carbon-based memory element and methods of forming the same (2013-09-17),

5. 8110476 - Memory cell that includes a carbon-based memory element and methods of forming the same (2012-02-07),

6. 8048474 - Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing (2011-11-01),

7. 7545689 - Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information (2009-06-09),

8. 7505321 - Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same (2009-03-17),

9. 7433233 - NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same (2008-10-07),

10. 7383476 - System architecture and method for three-dimensional memory (2008-06-03),

11. 7277336 - Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information (2007-10-02),

12. 7233522 - NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same (2007-06-19),

13. 7233024 - Three-dimensional memory device incorporating segmented bit line memory array (2007-06-19),

14. 7219271 - Memory device and method for redundancy/self-repair (2007-05-15),

15. 7132335 - Semiconductor device with localized charge storage dielectric and method of making same (2006-11-07),

Title: **Alper Ilkbahar: Innovator in Memory Device Technology**

Introduction

Alper Ilkbahar is a prolific inventor based in San Jose, California, known for his significant contributions to memory device technology. With an impressive portfolio of 52 patents, his innovations have played a crucial role in advancing the field of volatile and non-volatile memory systems.

Latest Patents

Among his latest patents, Ilkbahar has introduced a **volatile memory device employing a resistive memory element**. This innovative device features a resistive memory element with a barrier material portion made from germanium or a silicon-germanium alloy, alongside a charge-modulated resistive memory material that includes a non-filamentary, electrically conductive metal oxide. Notably, this device ensures that reading the resistance state does not disturb the charge-modulated memory material's resistance state.

In addition, he has developed a **three-dimensional memory device incorporating a segmented array line memory array**. This advanced high-density memory array consists of multiple layers of segmented bit lines with segment switch devices. These components connect the segments to global bit lines, reducing write-disturb effects and optimizing memory performance significantly.

Career Highlights

Throughout his career, Alper Ilkbahar has worked with leading companies in the technology sector. His experience includes time at **Intel Corporation** and **SanDisk 3D LLC**, where he has further honed his expertise in memory technology and contributed to groundbreaking advancements in the industry.

Collaborations

Ilkbahar's journey has allowed him to collaborate with esteemed colleagues such as **Roy E. Scheuerlein** and **Luca Giovanni Fasoli**. Through these partnerships, he has expanded the potential of memory solutions and fostered a culture of innovation within the teams he has been part of.

Conclusion

Alper Ilkbahar's contributions to memory device technology have solidified his reputation as an influential inventor. With a strong portfolio of patents and collaborations with renowned professionals in the field, his work continues to impact the future of memory technology innovations.

Profile summary based on public USPTO records.

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