The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9953697 B1

Date of Patent:

Apr. 24, 2018

Filed:

Aug. 30, 2016

Volatile memory device employing a resistive memory element

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Tanmay Kumar, Pleasanton, CA (US);

Alper Ilkbahar, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Hoai V Ho

Assistant Examiner:

Muna A Techane

Int. Cl.

CPC ...

G11C 11/4091 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);

U.S. Cl.

CPC ...

G11C 11/4091 (2013.01); G11C 13/0007 (2013.01); G11C 13/0033 (2013.01); H01L 27/249 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01); G11C 13/004 (2013.01);

Abstract

A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.

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