The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2008

Filed:

Feb. 09, 2004
Applicants:

Matthew P. Crowley, San Jose, CA (US);

Luca G. Fasoli, San Jose, CA (US);

Alper Ilkbahar, San Jose, CA (US);

Mark G. Johnson, Los Altos, CA (US);

Bendik Kleveland, Santa Clara, CA (US);

Thomas H. Lee, Burlingame, CA (US);

Roy E. Scheuerlein, Cupertino, CA (US);

Inventors:

Matthew P. Crowley, San Jose, CA (US);

Luca G. Fasoli, San Jose, CA (US);

Alper Ilkbahar, San Jose, CA (US);

Mark G. Johnson, Los Altos, CA (US);

Bendik Kleveland, Santa Clara, CA (US);

Thomas H. Lee, Burlingame, CA (US);

Roy E. Scheuerlein, Cupertino, CA (US);

Assignee:

SanDisk 3D LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array and at least two of the following system blocks: an Error Checking & Correction Circuit (ECC); a Checkerboard Memory Array containing sub arrays; a Write Controller; a Charge Pump; a Vread Generator; an Oscillator; a Band Gap Reference Generator; and a Page Register/Fault Memory. In another embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array, ECC, and smart write. The monolithic three-dimensional write-once memory array comprises a first conductor, a first memory cell above the first conductor, a second conductor above the first memory cell, and a second memory cell above the second conductor, wherein the second conductor is the only conductor between the first and second memory cells.


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