The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Sep. 23, 2003
Maitreyee Mahajani, Saratoga, CA (US);
Andrew J. Walker, Mountain View, CA (US);
En-hsing Chen, Sunnyvale, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
Andrew J. Walker, Mountain View, CA (US);
En-Hsing Chen, Sunnyvale, CA (US);
Matrix Semiconductors, Inc., Santa Clara, CA (US);
Abstract
The traditional nitride-only charge storage layer of a SONOS device is replaced by a multifilm charge storage layer comprising more than one dielectric material. Examples of such a multifilm charge storage layer are alternating layers of silicon nitride and silicon dioxide, or alternating layers of silicon nitride and aluminum oxide. The use of more than one material introduces additional barriers to migration of charge carriers within the charge storage layer, and improves both endurance and retention of a SONOS-type memory cell comprising such a charge storage layer.