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For the Inventor, By the Inventor

Saratoga, CA, United States of America

Maitreyee Mahajani

USPTO Granted Patents = 46 

 

Average Co-Inventor Count = 2.8

ph-index = 19

Forward Citations = 2,559(Granted Patents)


Location History:

  • Santa Clara, CA (US) (1998 - 2001)
  • Sunnyvale, CA (US) (2001)
  • San Jose, CA (US) (2001 - 2002)
  • Saratoga, CA (US) (2005 - 2016)

Company Filing History:

goldMedal27 out of 13,684 
 
Applied Materials, Inc.
 patents
silverMedal9 out of 669 
 
Sandisk 3d LLC
 patents
bronzeMedal8 out of 145 
 
Matrix Semiconductor, Inc.
 patents
4. 2 out of 832,680 
Other
 patents

Years Active: 1998-2016

where 'Filed Patents' based on already Granted Patents

46 patents (USPTO):
1. 9269584 - N-metal film deposition with initiation layer (2016-02-23),
2. 9048183 - NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors (2015-06-02),
3. 8987080 - Methods for manufacturing metal gates (2015-03-24),
4. 8951861 - Methods of making a high-density nonvolatile memory (2015-02-10),
5. 8895443 - N-metal film deposition with initiation layer (2014-11-25),
6. 8778816 - [object Object] (2014-07-15),
7. 8642468 - NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors (2014-02-04),
8. 8633119 - Methods for manufacturing high dielectric constant films (2014-01-21),
9. 8633114 - Methods for manufacturing high dielectric constant films (2014-01-21),
10. 8592305 - Doping aluminum in tantalum silicide (2013-11-26),
11. 8383478 - High-density nonvolatile memory and methods of making the same (2013-02-26),
12. 8361910 - Pretreatment processes within a batch ALD reactor (2013-01-29),
13. 8043907 - Atomic layer deposition processes for non-volatile memory devices (2011-10-25),
14. 8004033 - High-density nonvolatile memory (2011-08-23),
15. 7972978 - Pretreatment processes within a batch ALD reactor (2011-07-05),

Sure, I'll create an article about inventor Maitreyee Mahajani based on the information provided.

Title: Innovator Spotlight: Maitreyee Mahajani - Pioneering Inventor in Semiconductor Technologies

Introduction:

Maitreyee Mahajani, a distinguished inventor based in Saratoga, CA, has made significant contributions to the field of semiconductor technologies, holding an impressive total of 46 patents showcasing his innovative prowess.

Latest Patents:

Maitreyee Mahajani's recent patents include groundbreaking advancements in N-metal film deposition with initiation layer techniques, enhancing the capabilities of NMOS metal gate materials using CVD and ALD processes, and a method for processing substrates with precision and efficiency.

Career Highlights:

With an illustrious career, Mahajani has honed his expertise through roles at leading companies such as Applied Materials, Inc., and Sandisk 3D LLC. His strategic thinking and technical acumen have been instrumental in driving cutting-edge technological innovations in the semiconductor industry.

Collaborations:

Throughout his career, Mahajani has collaborated with esteemed professionals in the field, including Andrew J. Walker and S. Brad Herner. These collaborations have further fueled his inventive spirit and facilitated the development of pioneering technologies.

Conclusion:

In conclusion, Maitreyee Mahajani stands as a beacon of innovation in the realm of semiconductor technologies, with his numerous patents and groundbreaking contributions solidifying his reputation as a trailblazer in the field. His relentless pursuit of technological advancement continues to inspire future generations of inventors and researchers in the ever-evolving landscape of semiconductor technologies.

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