The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Feb. 25, 2013
Sandisk 3d Llc, Milpitas, CA (US);
Scott Brad Herner, San Jose, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Methods are provided for forming a monolithic three dimensional memory array. An example method includes: (a) forming a first plurality of substantially parallel, substantially coplanar conductors above a substrate; (b) forming a first plurality of semiconductor elements above the first plurality of substantially parallel, substantially coplanar conductors; and (c) forming a second plurality of substantially parallel, substantially coplanar conductors above the first plurality of semiconductor elements. Each of the first plurality of semiconductor elements includes a first heavily doped layer having a first conductivity type, a second lightly doped layer on and in contact with the first heavily doped layer, and a third heavily doped layer on and in contact with the second lightly doped layer. The third heavily doped layer has a second conductivity type opposite the first conductivity type. Numerous other aspects are provided.