The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jun. 18, 2012
Applicants:
Seshadri Ganguli, Sunnyvale, CA (US);
Xinliang LU, Fremont, CA (US);
Atif Noori, Saratoga, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Mei Chang, Saratoga, CA (US);
Inventors:
Seshadri Ganguli, Sunnyvale, CA (US);
Xinliang Lu, Fremont, CA (US);
Atif Noori, Saratoga, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Mei Chang, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H01L 21/02697 (2013.01);
Abstract
Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC.