Applied Materials, Inc.

Sandisk 3d LLC

Matrix Semiconductor, Inc.

Other

Maitreyee Mahajani

Andrew J Walker

S Brad Herner

Steve G Ghanayem

Seshadri Ganguli

Xinliang Lu

Yi-Chiau Huang

Sucheta Nallamothu

Mei Yin Chang

Joseph Yudovsky

Patricia M Liu

Shih Chung Chen

Atif Noori

En-Hsing Chen

Brendan McDougall

Roy E Scheuerlein

Srinivas Gandikota

Tanmay Kumar

Yu Lei

Jallepally Ravi

Michael Konevecki

Usha Raghuram

Moris Kori

Tatsuya E Sato

Ravi Rajagopalan

Hoon Sik Kim

Scott Brad Herner

Khaled Ahmed

Luca Giovanni Fasoli

Paul F Ma

Yi Ma

Sang Ho Yu

Ken Kaung Lai

Shreyas Kher

Toshiyuki Nakagawa

Kenneth Tsai

Tejal Goyani

David P Thompson

Steven Verhaverbeke

Jeffrey W Anthis

Arnold Kholodenko

Jun Zhao

Roman Gouk

Xinyu Fu

Kevin Griffin

Wei V Tang

Vladimir Zubkov

Semyon Sherstinsky

Talex Sajoto

Malcolm J Bevan

Leonid Selyutin

Tai T Ngo

Ravi Jallepally

Calvin R Augason

Leonel Arturo Zuniga

Andrew C Sherman

Mark Clark

Wei Tang

Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaC.

N-metal film deposition with initiation layer

Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors

Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Methods for manufacturing metal gates

Methods are provided for forming a monolithic three dimensional memory array. An example method includes: (a) forming a first plurality of substantially parallel, substantially coplanar conductors above a substrate; (b) forming a first plurality of semiconductor elements above the first plurality of substantially parallel, substantially coplanar conductors; and (c) forming a second plurality of substantially parallel, substantially coplanar conductors above the first plurality of semiconductor elements. Each of the first plurality of semiconductor elements includes a first heavily doped layer having a first conductivity type, a second lightly doped layer on and in contact with the first heavily doped layer, and a third heavily doped layer on and in contact with the second lightly doped layer. The third heavily doped layer has a second conductivity type opposite the first conductivity type. Numerous other aspects are provided.

Methods of making a high-density nonvolatile memory

Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.

Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

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Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.

Methods for manufacturing high dielectric constant films

Provided are methods of providing aluminum-doped TaSifilms. Doping TaSifilms allows for the tuning of the work function value to make the TaSifilm better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSifilm with an aluminum-containing compound. Another method relates to depositing a TaSifilm, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSifilm using tantalum, aluminum and silicon precursors.

Doping aluminum in tantalum silicide

Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; forming a first dielectric antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and forming a second conductor above the first dielectric antifuse.

High-density nonvolatile memory and methods of making the same

Embodiments of the invention provide methods for forming dielectric materials on a substrate. In one embodiment, a method includes exposing a substrate surface to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas contains a mixture of ozone and oxygen having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent and forming a hafnium-containing material on the substrate surface by exposing the substrate surface sequentially to a deposition gas and a second oxidizing gas during an atomic layer deposition (ALD) process, wherein the deposition gas contains a hafnium precursor, the second oxidizing gas contains water, and the hafnium-containing material has a thickness within a range from about 5 &#x212b; to about 300 &#x212b;. In one example, the hafnium-containing material contains hafnium oxide having the chemical formula of HfO, whereas x is less than 2, such as about 1.8.

Pretreatment processes within a batch ALD reactor

Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate.

Atomic layer deposition processes for non-volatile memory devices

High-density nonvolatile memory

Embodiments of the invention provide methods for forming a hafnium material on a substrate within a processing chamber. In one embodiment, a method is provided which includes exposing the substrate within the processing chamber to a first oxidizing gas during a pretreatment process, exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition (ALD) cycle, wherein the second oxidizing gas contains water and the deposition gas contains a hafnium amino compound, and repeating the ALD cycle to form a hafnium-containing layer having a thickness within a range from about 5 &#x212b; to about 300 &#x212b;. In one example, the first oxidizing gas contains an O/Omixture having an ozone concentration within a range from about 5 atomic percent to about 30 atomic percent.

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Saratoga, CA, United States of America

Maitreyee Mahajani