The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 15, 2011
Xinliang LU, Fremont, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
Mei Chang, Saratoga, CA (US);
Xinliang Lu, Fremont, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Maitreyee Mahajani, Saratoga, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Provided are methods of providing aluminum-doped TaSifilms. Doping TaSifilms allows for the tuning of the work function value to make the TaSifilm better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSifilm with an aluminum-containing compound. Another method relates to depositing a TaSifilm, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSifilm using tantalum, aluminum and silicon precursors.