The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Jun. 18, 2012
Applicants:

Seshadri Ganguli, Sunnyvale, CA (US);

Xinliang LU, Fremont, CA (US);

Atif Noori, Saratoga, CA (US);

Maitreyee Mahajani, Saratoga, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Mei Chang, Saratoga, CA (US);

Inventors:

Seshadri Ganguli, Sunnyvale, CA (US);

Xinliang Lu, Fremont, CA (US);

Atif Noori, Saratoga, CA (US);

Maitreyee Mahajani, Saratoga, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Mei Chang, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01);
Abstract

Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.


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