The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Oct. 31, 2023
Applicant:
Sunrise Memory Corporation, San Jose, CA (US);
Inventors:
Scott Brad Herner, Portland, OR (US);
Wu-Yi Henry Chien, San Jose, CA (US);
Jie Zhou, San Jose, CA (US);
Eli Harari, Saratoga, CA (US);
Assignee:
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method for forming 3-dimensional vertical NOR-type memory string arrays uses damascene local bit lines is provided. The method of the present invention also avoids ribboning by etching local word lines in two steps. By etching the local word lines in two steps, the aspect ratio in the patterning and etching of stack of local word lines ('word line stacks') is reduced, which improves the structural stability of the word line stacks.