The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Oct. 05, 2021
Sunrise Memory Corporation, San Jose, CA (US);
Scott Brad Herner, Portland, OR (US);
Christopher J. Petti, Mountain View, CA (US);
George Samachisa, Atherton, CA (US);
Wu-Yi Henry Chien, San Jose, CA (US);
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Abstract
A thin-film storage transistor in a NOR memory string has a gate dielectric layer that includes a silicon oxide nitride (SiON) tunnel dielectric layer. In one embodiment, the SiON tunnel dielectric layer has a thickness between 0.5 to 5.0 nm thick and an index of refraction between 1.5 and 1.9. The SiON tunnel dielectric layer may be deposited at between 720° C. and 900° C. and between 100 and 800 mTorr vapor pressure, using an LPCVD technique under DCS, NO, and NHgas flows. The SiON tunnel dielectric layer may have a nitrogen content of 1-30 atomic percent (at %).