The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Apr. 28, 2022
Sunrise Memory Corporation, San Jose, CA (US);
Scott Brad Herner, Portland, OR (US);
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Abstract
A thin-film storage transistor includes a charge storage film provided between a channel region and a gate conductor where the charge storage film includes a tunneling dielectric layer formed adjacent the channel region and a charge trapping layer formed adjacent the tunneling dielectric layer. In some embodiments, the charge trapping layer is a layer including silicon, silicon oxide and silicon nitride materials. In one embodiment, the charge trapping layer is a layer including a mixture of silicon, silicon oxide and silicon nitride materials, where the silicon oxide and silicon nitride may or may not be their respective stoichiometric compounds.