Enter inventor name

Santa Clara, CA, United States of America

Mark Harold Clark

USPTO Granted Patents = 42 (Patent Applications = 5)

EPO Patents = 4 (Patent Applications = 1)

Average Co-Inventor Count = 2.6

ph-index = 9

Forward Citations = 380(Granted Patents)

Location History:

Upland, CA (US) (2004 - 2008)
Santa Clara, CA (US) (2009 - 2019)

Company Filing History:

Matrix Semiconductor, Inc.

Twin Creek Technologies, Inc.

patent

8. 1 out of 32

Twin Creeks Technologies, Inc.

patents

Years Active: 2004-2019

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Areas of Expertise:

Non-Volatile Memory

Resistive Memory

RRAM Device Architecture

Selector Element

Silicon Germanium Material

Carbon Nano-Tube

Photovoltaic Cell

Low Temperature Deposition

Dielectric Layers

Ion Implantation

Memory Cell Design

Tunneling Barrier

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10192927 - Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memory (2019-01-29),

2. 9680092 - Current selectors formed using single stack structures (2017-06-13),

3. 9601690 - Sub-oxide interface layer for two-terminal memory (2017-03-21),

4. 9583701 - Methods for fabricating resistive memory device switching material using ion implantation (2017-02-28),

5. 9455393 - Low temperature deposition of low loss dielectric layers in superconducting circuits (2016-09-27),

6. 9443906 - TiOx based selector element (2016-09-13),

7. 9412790 - Scalable RRAM device architecture for a non-volatile memory device and method (2016-08-09),

8. 9368721 - Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory application (2016-06-14),

9. 9337238 - Photo-induced MSM stack (2016-05-10),

10. 9318531 - SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices (2016-04-19),

11. 9269897 - Device structure for a RRAM and method (2016-02-23),

12. 9252191 - Seed layer for a p+ silicon germanium material for a non-volatile memory device and method (2016-02-02),

13. 9246092 - Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application (2016-01-26),

14. 9166163 - Sub-oxide interface layer for two-terminal memory (2015-10-20),

15. 9070859 - Low temperature deposition method for polycrystalline silicon material for a non-volatile memory device (2015-06-30),

Title: Mark Harold Clark: Innovator in Semiconductor Technology

Introduction

Mark Harold Clark, based in Santa Clara, CA, has made significant contributions to the field of semiconductor technology with a remarkable portfolio of 42 patents. His innovations primarily focus on non-volatile resistive memory, showcasing his expertise in the development of advanced memory devices.

Latest Patents

Clark's latest patents include a revolutionary semiconductor device designed specifically for non-volatile resistive memory. This design emphasizes the formation of a resistive switching device through a detailed method that includes layers of dielectric material, wiring structures, and a unique configuration that minimizes the interaction between junction materials and resistive switching materials. Additionally, his patents cover current selectors that incorporate hybrid electrodes, which offer enhanced flexibility in memory cell addressing with minimal component requirements. These innovations set a new standard in memory technology and showcase his technical prowess.

Career Highlights

Throughout his career, Mark Harold Clark has been associated with leading technology firms, including SanDisk 3D LLC and Crossbar, Inc. His work at these companies highlights his dedication to advancing semiconductor technology and developing solutions that drive the industry forward. His contributions have not only resulted in a wealth of patents but have also influenced the practical applications of resistive memory technologies in various consumer electronic devices.

Collaborations

Clark has collaborated with distinguished professionals such as April Dawn Schricker and S. Brad Herner. These collaborations have facilitated the exchange of innovative ideas and reinforced his standing in the semiconductor innovation community. Working alongside such talented individuals has contributed to the success of his projects and furthered the development of state-of-the-art memory technologies.

Conclusion

Mark Harold Clark stands out as a prominent inventor in the realm of semiconductor devices, particularly in non-volatile memory. His extensive patent portfolio reflects his innovative spirit and commitment to excellence in technology. With ongoing advancements and collaborations, Clark continues to play a pivotal role in shaping the future of memory technology, ensuring that his contributions will have a lasting impact on the industry.

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