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For the Inventor, By the Inventor

Merrimack, NH, United States of America

Gtat Corporation


USPTO Granted Patents = 72

% Expired Patents = 44.4


Trademarks = 4

Forward Citations = 112

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102 inventors (with patents filed for the assignee):

goldMedal Gopal Prabhu (12 out of 20 patents)

silverMedal Christopher John Petti (11 out of 164 patents)

bronzeMedal Andriy M Andrukhiv (10 out of 10 patents)

4.  Venkatesan Murali (10 out of 50 patents)

5.  Roman V Drachev (9 out of 9 patents)

6.  David S Lyttle (9 out of 9 patents)

7.  Theodore H Smick (9 out of 50 patents)

8.  Geoffrey Ryding (7 out of 56 patents)

9.  Arvind Chari (6 out of 8 patents)

10.  Robert Brainard (6 out of 13 patents)

11.  Parthasarathy Santhanaraghavan (6 out of 6 patents)

12.  S Brad Herner (6 out of 95 patents)

13.  David Tanner (5 out of 42 patents)

14.  Steve E Babayan (5 out of 9 patents)

15.  Carl Chartier (5 out of 7 patents)


Core Competencies:
Silicon Carbide
Crystal Growth
Photovoltaic Cell
CVD Reactor
Trichlorosilane
Sapphire Cover Plate
Ion Implantation
Thermal Management
Polysilicon
Temperature Control
Semiconductors
Gas Distribution

72 patents:

1. 11591714 - Apparatus for producing bulk silicon carbide (2023-02-28),
2. 11505876 - Method for producing bulk silicon carbide (2022-11-22),
3. 11434582 - Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide (2022-09-06),
4. 11421343 - Method and apparatus for producing bulk silicon carbide using a silicon carbide seed (2022-08-23),
5. 11174567 - Method of automatically measuring seed melt back of crystalline material (2021-11-16),
6. 10851473 - Apparatus for producing bulk silicon carbide (2020-12-01),
7. 10801126 - Method for producing bulk silicon carbide (2020-10-13),
8. 10793971 - Method and apparatus for producing bulk silicon carbide using a silicon carbide seed (2020-10-06),
9. 10633762 - Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide (2020-04-28),
10. 10633759 - Technique for controlling temperature uniformity in crystal growth apparatus (2020-04-28),
11. 10494733 - Method of automatically measuring seed melt back of crystalline material (2019-12-03),
12. 10450649 - Reactor filament assembly with enhanced misalignment tolerance (2019-10-22),
13. 10315181 - Heater and related methods therefor (2019-06-11),
14. 10209405 - Mobile electronic device cover plate comprising a thin sapphire layer (2019-02-19),
15. 9982361 - Liquid-cooled heat exchanger (2018-05-29),
GTAT Corporation is a leading global provider of advanced materials and equipment solutions in various industries. With a focus on developing innovative technologies, GTAT delivers products that enhance the performance and efficiency of solar power, consumer electronics, and specialty industrial applications. Their expertise includes crystal growth, wafering, and fabrication of materials such as silicon, sapphire, silicon carbide, and diamond. GTAT serves customers worldwide and continuously strives to push the boundaries of material science for a sustainable future.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Sep 22 2026

Gtat Corporation
72 Patents

#2 in Merrimack, NH

#38 in New Hampshire

#5,098 in US

#10,370 in the World

Merrimack, NH (US)
Merrimack, NH, United States of America

Gtat Corporation

Forward Citations = 112

102 inventors:

goldMedal Gopal Prabhu (12 out of 20 patents)

silverMedal Christopher John Petti (11 out of 164 patents)

bronzeMedal Andriy M Andrukhiv (10 out of 10 patents)

4.  Venkatesan Murali (10 out of 50 patents)

5.  Roman V Drachev (9 out of 9 patents)

Please report any incorrect information to [email protected]
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