Company Filing History:
Years Active: 2016-2023
Title: Innovations of Roman V Drachev in Silicon Carbide Production
Introduction
Roman V Drachev is a notable inventor based in Bedford, NH (US), recognized for his contributions to the field of silicon carbide production. With a total of 9 patents to his name, Drachev has made significant advancements in the methods and apparatus used for producing this important material.
Latest Patents
Drachev's latest patents include an "Apparatus for producing bulk silicon carbide" and a "Method for producing bulk silicon carbide." Both patents disclose a method that involves a sublimation furnace, which consists of a furnace shell, at least one heating element positioned outside the shell, and a hot zone inside the shell surrounded by insulation. The hot zone contains a crucible with a silicon carbide precursor in the lower region and a silicon carbide seed in the upper region. The heating process sublimates the silicon carbide precursor, resulting in the formation of silicon carbide on the bottom surface of the silicon carbide seed. These patents also detail the design of the sublimation furnace and the resulting silicon carbide material.
Career Highlights
Drachev is currently associated with GTAT Corporation, where he continues to innovate in the field of materials science. His work has been instrumental in enhancing the efficiency and effectiveness of silicon carbide production processes.
Collaborations
Throughout his career, Drachev has collaborated with talented individuals such as Andriy M Andrukhiv and David S Lyttle, contributing to a dynamic and innovative work environment.
Conclusion
Roman V Drachev's contributions to silicon carbide production through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in materials science and technology.