Gtat Corporation

Roman V Drachev

Andriy M Andrukhiv

David S Lyttle

Parthasarathy Santhanaraghavan

Santhanaraghavan Parthasarathy

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

Apparatus for producing bulk silicon carbide

Method for producing bulk silicon carbide

Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide

Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

Bulk silicon carbide having low defect density

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Bedford, NH, United States of America

Roman V Drachev