The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Sep. 17, 2014
Applicant:
Gtat Corporation, Merrimack, NH (US);
Inventors:
Frederick Schmid, Marblehead, MA (US);
Cody Riopel, North Reading, MA (US);
Hui Zhang, Nashua, NH (US);
Assignee:
GTAT Corporation, Hudson, NH (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 29/06 (2006.01); C30B 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 11/002 (2013.01); C30B 11/003 (2013.01); C30B 29/06 (2013.01); C30B 29/20 (2013.01); Y10T 117/1092 (2015.01);
Abstract
A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.