The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
May. 25, 2012
Mark Harold Clark, Santa Clara, CA (US);
Mark Harold Clark, Santa Clara, CA (US);
Crossbar, Inc., Santa Clara, CA (US);
Abstract
A method of forming a non-volatile memory device, includes providing a substrate, forming a first dielectric over the substrate, forming a first wiring structure over the first dielectric, forming a first conductor in contact with the first wiring structure, forming a polycrystalline p+ SiGe material over the first conductor at a deposition temperature ranging from about 350 to about 500 Degrees Celsius, forming a polycrystalline silicon conformally over the SiGe material using the SiGe material as a lattice template at a deposition temperature within about 350 to about 500 Degrees Celsius, the polycrystalline silicon having an intrinsic semiconductor characteristic, forming a second conductor over the polycrystalline silicon in physical and electric contact with the resistive polycrystalline silicon, and forming a second wiring structure over the second conductor.