The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jun. 07, 2019
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Kuk-Hwan Kim, San Jose, CA (US);

Gian Sharma, Fremont, CA (US);

Amitay Levi, Cupertino, CA (US);

Assignee:

SPIN MEMORY, INC., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/165 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/228 (2013.01);
Abstract

The various implementations described herein include methods, devices, and systems for performing operations on memory devices. In one aspect, a memory device a magnetic memory component and a current selector component coupled to the magnetic memory component. The current selector component includes a first transistor having a first gate with a corresponding first threshold voltage. The first transistor comprises a charge storage layer configured to selectively store charge so as to adjust a current through the first transistor. The memory device further includes control circuitry configured to determine a bit error rate of the magnetic memory component and adjust a charge stored in the charge storage layer based on the determined bit error rate.


Find Patent Forward Citations

Loading…