The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

May. 18, 2018
Applicant:

Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;

Inventors:

Kuk-Hwan Kim, San Jose, CA (US);

Dafna Beery, Palo Alto, CA (US);

Amitay Levi, Cupertino, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A three dimensional magnetic random access memory array that includes a sourceline formed on a substrate and a magnetic memory element pillar that includes a plurality of magnetic memory element pillars formed over the substrate. The three dimensional magnetic random access memory array also includes a transistor formed between the magnetic memory element pillar, the transistor being functional to electrically connect the sourceline and magnetic memory element pillar. A plurality of magnetic memory element pillars may be formed over the substrate with a transistor between each memory element pillar to selectively connect or disconnect each of the magnetic memory element pillars. The transistor can include an epitaxial semiconductor structure having a gate dielectric formed at a side of the epitaxial semiconductor and a gate material formed on the gat dielectric such that the gate dielectric material is between the gate material and the semiconductor material.


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