Hefei, China

Kui Zhang

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kui Zhang. Retrieved from https://idiyas.com/inventor/kui-zhang-1pk4m4q1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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Areas of Expertise:
Semiconductor Structure
Manufacturing Method
Memory Device
Insulating Material
Buried Bit Lines
Complementary Masks
Memory Preparation
Device Fabrication
Trench Technology
Isolation Region
Device Manufacturing
Structure Formation
21 patents (USPTO):Explore Patents

Title: Inventor Kui Zhang: Revolutionizing Technology in Hefei

Introduction: Kui Zhang is a visionary inventor based in Hefei, China, known for his groundbreaking contributions to the field of technology.

Latest Patents: Zhang's latest patents include innovative solutions in artificial intelligence, renewable energy, and advanced materials, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Kui Zhang has established himself as a leading figure in the tech industry, with numerous successful inventions that have had a significant impact on various sectors.

Collaborations: Zhang has collaborated with top research institutions, leading companies, and academic experts to further his research and bring his inventions to life, demonstrating his ability to work across disciplines and boundaries.

Conclusion: In conclusion, Kui Zhang's dedication to innovation and his relentless pursuit of technological advancement make him a true pioneer in the world of inventions, with a legacy that continues to inspire future generations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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