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Changxin Memory Technologies, Inc.

USPTO Granted Patents = 1,677

EPO Patents = 260

Trademarks = 4

Forward Citations = 165

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790 inventors (with patents filed for the assignee):

Deyuan Xiao (80 out of 80 patents)

Guangsu Shao (59 out of 59 patents)

Zhan Ying (58 out of 58 patents)

4. Jingwen Lu (42 out of 42 patents)

5. WeiBing Shang (40 out of 40 patents)

6. KangLing Ji (36 out of 36 patents)

7. Jun Xia (32 out of 32 patents)

8. Liang Zhang (31 out of 127 patents)

9. Xiaoguang Wang (29 out of 29 patents)

10. ChihCheng Liu (29 out of 29 patents)

11. Qiang Wan (29 out of 29 patents)

12. Shu-Liang Ning (28 out of 28 patents)

13. Zhongming Liu (27 out of 27 patents)

14. Sen Li (27 out of 27 patents)

15. Tao Liu (26 out of 27 patents)

Core Competencies:

Semiconductor Structure

Memory Device

Manufacturing Method

Data Processing Circuit

Three-Dimensional Memory

Capacitor Structure

Transistor Fabrication

Anti-Fuse Circuit

Sense Amplification Circuit

Data Transmission Method

Electronic Device

Integrated Circuit Design

1,677 patents: Sort by Forward Citations

1. 12520478 - Method for fabricating semiconductor structure and semiconductor structure (2026-01-06),

2. 12520473 - Semiconductor structure and method for manufacturing semiconductor structure (2026-01-06),

3. 12519014 - Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same (2026-01-06),

4. 12518801 - Circuitry and method for processing data, and semiconductor memory (2026-01-06),

5. 12517538 - Power supply circuit and chip (2026-01-06),

6. 12513968 - Semiconductor structure and method for manufacturing same (2025-12-30),

7. 12513917 - Method for manufacturing capacitor array, capacitor array, and semiconductor device (2025-12-30),

8. 12513916 - Semiconductor structure and manufacturing method therefor (2025-12-30),

9. 12513897 - Semiconductor structure having void in a bit line contact structure (2025-12-30),

10. 12513895 - Semiconductor structure and method for preparing same (2025-12-30),

11. 12513894 - Semiconductor structure, method for manufacturing semiconductor structure, and memory (2025-12-30),

12. 12513893 - Semiconductor structure and method for fabricating same (2025-12-30),

13. 12513890 - Memory structure and manufacturing method thereof, and semiconductor structure (2025-12-30),

14. 12513889 - Method of manufacturing a semiconductor structure comprising forming an insulating material layer with gaps therein in isolation region and manufactured semiconductor structure (2025-12-30),

15. 12513885 - Method for forming semiconductor device and semiconductor device (2025-12-30),

Changxin Memory Technologies, Inc. is a leading semiconductor company specializing in the design and manufacture of advanced memory technologies. Our state-of-the-art solutions are tailored to meet the ever-growing demands of the digital era. With a focus on research and development, we constantly strive to deliver innovative products that enhance performance, reliability, and energy efficiency. Through our cutting-edge technologies, we aim to revolutionize the memory market and empower industries across the globe.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Jan 6 2026

1,677 Patents

#1 in Hefei

#17 in China

#585 in the World

Changxin Memory Technologies, Inc.

Forward Citations = 165

790 inventors:

Deyuan Xiao (80 out of 80 patents)

Guangsu Shao (59 out of 59 patents)

Zhan Ying (58 out of 58 patents)

4. Jingwen Lu (42 out of 42 patents)

5. WeiBing Shang (40 out of 40 patents)

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