Hefei, China

Changxin Memory Technologies, Inc.


USPTO Granted Patents = 1,851


Trademarks = 4

Forward Citations = 223

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829 inventors (with patents filed for the assignee):

goldMedal Deyuan Xiao (98 out of 98 patents)

silverMedal Guangsu Shao (68 out of 68 patents)

bronzeMedal Zhan Ying (58 out of 58 patents)

4.  Jingwen Lu (47 out of 47 patents)

5.  WeiBing Shang (43 out of 43 patents)

6.  KangLing Ji (36 out of 36 patents)

7.  Xiaoguang Wang (33 out of 33 patents)

8.  Jun Xia (32 out of 32 patents)

9.  Liang Zhang (31 out of 130 patents)

10.  Kanyu Cao (30 out of 30 patents)

11.  Yunsong Qiu (30 out of 30 patents)

12.  ChihCheng Liu (29 out of 29 patents)

13.  Qiang Wan (29 out of 29 patents)

14.  Shu-Liang Ning (28 out of 28 patents)

15.  Zhongming Liu (28 out of 28 patents)


Core Competencies:
Semiconductor Memory
Fabrication Methods
Phase Change Memory
Data Storage Circuits
Semiconductor Structure
Memory Cell
Electrostatic Discharge Protection
3D DRAM Memory
Memory Device
Control Method
Test Structure
Write Leveling Circuit

1,851 patents:

Company Overview
Changxin Memory Technologies, Inc. is a leading semiconductor memory manufacturer based in Hefei, China. The company specializes in the development and production of advanced memory solutions, including phase change memory and 3D DRAM memory. With a focus on innovative fabrication methods and robust data storage circuits, Changxin Memory Technologies aims to enhance memory cell performance and reliability. The organization is committed to advancing semiconductor structures and providing effective electrostatic discharge protection in its products.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 13 2026

Changxin Memory Technologies, Inc. USPTO Patent Assignee Logo
1,851 Patents

#1 in Hefei

#15 in China

#546 in the World

Hefei, CN
Hefei, China
Forward Citations = 223

829 inventors:

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Changxin Memory Technologies, Inc.. Retrieved from https://idiyas.com/company/changxin-memory-technologies

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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