The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Jun. 29, 2022
Changxin Memory Technologies, Inc., Hefei City, CN;
Beijing Superstring Academy of Memory Technology, Beijing, CN;
Guangsu Shao, Hefei City, CN;
Deyuan Xiao, Hefei City, CN;
Yunsong Qiu, Hefei City, CN;
Mengkang Yu, Hefei City, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a plurality of active pillars, a dielectric layer that is disposed around a circumference of the active pillar and that covers a part of a sidewall of the active pillar, and a word line. Any two adjacent ones of the plurality of active pillars are separated by using a first trench or a second trench. The first trench and the second trench are staggered. The second trench is wider than the first trench. The dielectric layer is disposed around the circumference of the active pillars. The word line partially covers the dielectric layer, and fills a part of the first trench located between adjacent active pillars.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile