Hefei, China

Guangsu Shao

This inventor holds 68 USPTO granted patents and 14 published patent applications and 3 EPO patents, primarily in Semiconductor Structures. Top assignees: Changxin Memory Technologies, Inc., Beijing Superstring Academy of Memory Technology. Active years: 2023-2026.

USPTO Granted Patents = 68 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 6(Granted Patents)

Forward Citations (Not Self Cited) = 2(Dec 10, 2025)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Semiconductor Structure
Memory Fabrication
Three-Dimensional Memory
Manufacturing Method
Silicon-Germanium Compound
Bottom Bit Line
DRAM Structure
Pillar Lower Electrode
Bit Line Isolation
Metal Silicide Layer
Mutually Perpendicular Trenches
Semiconductor Device
68 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Guangsu Shao in Semiconductor Technology

Introduction

Guangsu Shao is a prominent inventor based in Hefei, China, celebrated for his significant contributions to the field of semiconductor technology. With a remarkable portfolio comprising 19 patents, his work is pivotal in advancing semiconductor structures and manufacturing methods that drive modern technological innovations.

Latest Patents

Among his notable recent patents, Guangsu Shao has developed a semiconductor structure and a manufacturing method that addresses key challenges in semiconductor design. This innovation involves a process that includes providing a substrate with spaced trenches, forming sacrificial and protective layers, and subsequently creating air gaps that enhance the functionality of bit lines within the substrate.

Another pivotal invention is the memory and semiconductor structure formation method. This patent details a process that establishes multiple support pillars within a substrate, facilitating the construction of a capacitor structure. This innovative design not only enhances memory technology but also optimizes the performance of semiconductor devices.

Career Highlights

Guangsu Shao has played a vital role in various esteemed organizations. He has contributed to Changxin Memory Technologies, Inc., where he has been deeply involved in advancing memory technologies. Additionally, his collaboration with the Beijing Superstring Academy of Memory Technology underscores his commitment to research and innovation within the semiconductor domain.

Collaborations

In his career, Guangsu has collaborated with other notable inventors, including Deyuan Xiao and Yunsong Qiu. These partnerships have fostered an environment of innovation and creativity, allowing for the exchange of ideas essential for breakthroughs in semiconductor technology.

Conclusion

Guangsu Shao stands as a significant figure in the field of semiconductor innovations. His extensive patent portfolio highlights his commitment to addressing core challenges within the technology sector. With his continued contributions, he plays a vital role in shaping the future landscape of semiconductor technology, positioning him as a key player in driving forward the boundaries of research and application in this critical field.

Profile summary based on public USPTO records.
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