The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jan. 20, 2023
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02); H10B 12/482 (2023.02);
Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate; and forming a plurality of columns of stacked structures arranged at intervals in a first direction on the substrate, each stacked structures including a plurality of first sacrificial layers and a plurality of active layers that are stacked alternately. Part of each of the first sacrificial layers is removed to form a first trench and a second trench, and part of each of the active layers is exposed from the first trench and the second trench. Next, the exposed active layers are doped by ion doping to form first doped areas and second doped areas.