Hefei, China

Yi Jiang

This inventor holds 16 USPTO granted patents and 5 published patent applications and 1 EPO patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2023-2026.

USPTO Granted Patents = 16 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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16 patents (USPTO):Explore Patents

Title: Yi Jiang - Innovator in Semiconductor Technology

Introduction

Yi Jiang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on innovative methods for manufacturing semiconductor structures and enhancing memory devices.

Latest Patents

Yi Jiang's latest patents include a semiconductor structure and a method for manufacturing the same. This method involves providing a substrate and forming mutually parallel first trenches that extend along a first direction. It also includes the creation of first isolation structures that fill these trenches. Additionally, he has developed a method for manufacturing a three-dimensional semiconductor structure, which features memory rows arranged at intervals and includes memory cells with a unique stacked layer design.

Career Highlights

Yi Jiang is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His expertise in the field has led to advancements that are crucial for the development of modern memory technologies.

Collaborations

Throughout his career, Yi Jiang has collaborated with notable colleagues, including Deyuan Xiao and Guangsu Shao. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

Yi Jiang's contributions to semiconductor technology exemplify the spirit of innovation. His patents and ongoing work at Changxin Memory Technologies, Inc. highlight his role as a key figure in advancing memory device technology.

Profile summary based on public USPTO records.
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