Semiconductor structure, method for manufacturing same and memory

Abstract

A method for manufacturing a semiconductor structure includes providing a substrate; forming mutually parallel first trenches extending along a first direction in the substrate and first isolation structures filling the first trenches; forming mutually parallel second trenches extending along a second direction in the substrate and in the first isolation structures, the first and second trenches dividing the substrate to form active pillars, and a depth of the second trenches being less than that of the first trenches; forming second isolation structures alternately arranged with the first isolation structures along the second direction at bottoms of the second trenches, top surfaces of the second isolation structures being lower than bottom surfaces of the second trenches located in the first isolation structures; forming bit line structures on the second isolation structures; and forming word line structures above the bit line structures.