Three-dimensional memory and formation method thereof

Abstract

A method for forming a three-dimensional memory provided by embodiments includes: forming a substrate and a stacked layer, where the stacked layer includes first semiconductor layers and second semiconductor layers alternately stacked, a thickness of the second semiconductor layers is D1, the first semiconductor layers include a plurality of channel regions as well as a first region and a second region arranged on opposite two sides of each of the plurality of channel regions along a first direction, and the first direction is a direction parallel to the top surface of the substrate; forming a plurality of first openings respectively exposing the plurality of channel regions, a gap between adjacent two of the plurality of first openings along a second direction has a width D2, D1>D2; and depositing a conductive layer along the plurality of first openings.