The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jun. 13, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei City, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/312 (2023.02); H10B 12/05 (2023.02); H10B 12/377 (2023.02);
Abstract
A semiconductor structure includes at least one transistor. The transistor includes a channel, a gate, a source, and a drain. The channel includes a first material layer and a second material layer arranged around the first material layer. Resistivity of the first material layer is greater than a first preset value, and resistivity of the second material layer is less than a second preset value, the first preset value being greater than the second preset value. The gate covers at least one side of the channel. The source and the drain are at two ends of an extension direction of the channel.