Semiconductor structure with vertical transistor and forming method therefor

Abstract

Semiconductor structure and forming method therefor are provided. The semiconductor structure includes: substrate; first vertical transistor, including first source, first channel region located on the first source, first drain located on the first channel region, and first gate dielectric layer and first gate surrounding the first channel region; first storage structure located on the first drain; second vertical transistor, including the first source, second channel region located on the first source, second drain located on the second channel region, and second gate dielectric layer and second gate surrounding the second channel region; and second storage structure located on the second drain. The first source has bottom structure, first connection structure connecting the bottom structure, the first channel region and the second channel region, and second connection structure connecting the bottom structure and located on two sides of the first channel region and the second channel region.