WeiBing Shang

This inventor holds 43 USPTO granted patents and 7 published patent applications and 11 EPO patents, primarily in Semiconductor Memory. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2022-2026.

USPTO Granted Patents = 43 (Patent Applications = 7)

% Patents Active = 93.0

EPO Patents = 11 (Patent Applications = 21)

Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 25(Granted Patents)

Location History:

Shanghai, CN (2022 - 2023)
Hefei, CN (2022 - 2024)

Company Filing History:

43 out of 1,843

Changxin Memory Technologies, Inc.

patents

Years Active: 2022-2026

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Areas of Expertise:

Data Storage Circuit

Semiconductor Structure

Power Supply Circuit

Sense Amplifier

Memory Device

Error Checking

Amplification Circuit

Data Transmission

Integrated Circuit

Read/Write Circuit

Dynamic Control

Noise Cancellation

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12687984 - Read/write switching circuit and memory (2026-07-21),

2. 12620422 - Data storage circuit and control method thereof, and storage apparatus (2026-05-05),

3. 12575091 - Semiconductor structure and processor (2026-03-10),

4. 12517538 - Power supply circuit and chip (2026-01-06),

5. 12469576 - Memory with arrays of sense amplifiers and two error checking and correction (ECC) modules (2025-11-11),

6. 12451180 - Offset cancellation method and method of preventing noise generated during sensing and amplification (2025-10-21),

7. 12374389 - Memory bank and memory (2025-07-29),

8. 12327600 - Memory with error checking and correcting unit (2025-06-10),

9. 12315555 - Amplification circuit, control method, and memory (2025-05-27),

10. 12315554 - Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory (2025-05-27),

11. 12283339 - Data transmission circuit and memory device (2025-04-21),

12. 12266397 - Amplification circuit, control method, and memory (2025-04-01),

13. 12260899 - Decoder driver circuit and memory chip (2025-03-25),

14. 12254939 - Memory structure and memory device (2025-03-18),

15. 12237038 - Local sensing amplifier and memory (2025-02-25),

Title: WeiBing Shang: Pioneering Inventor from Hefei, CN

Introduction: WeiBing Shang is a distinguished inventor hailing from Hefei, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: WeiBing Shang holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, WeiBing Shang has worked with leading research institutions and technology companies, consistently pushing the boundaries of what is possible in the realm of innovation.

Collaborations: Throughout his career, WeiBing Shang has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of creativity and excellence in all his projects.

Conclusion: WeiBing Shang's relentless pursuit of innovation and his passion for creating solutions to complex problems make him a true visionary in the world of inventions.