The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Sep. 28, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Minghao Li, Hefei, CN;

Fengqin Zhang, Hefei, CN;

Weibing Shang, Hefei, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 11/4096 (2006.01); H01L 23/00 (2006.01); H10D 10/01 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 11/4096 (2013.01); H01L 24/01 (2013.01); H10B 12/01 (2023.02); H10B 12/09 (2023.02); H10D 10/01 (2025.01); H10D 30/01 (2025.01);
Abstract

A semiconductor structure and a memory are provided The semiconductor structure includes: a first active area pattern; a first gate pattern, a second gate pattern, a third gate pattern and a fourth gate pattern which are arranged at intervals in a first direction; a first connection pattern, arranged to connect the second gate pattern and the third gate pattern in parallel; a second connection pattern, arranged to connect the first gate pattern and the fourth gate pattern in parallel; at least two first contact hole patterns arranged in parallel; and at least two second contact hole patterns and at least two third contact hole patterns arranged in parallel.


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