The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jan. 13, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Kui Zhang, Hefei, CN;

Zhan Ying, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H01L 25/07 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H01L 25/074 (2013.01); H10D 84/0172 (2025.01); H10D 84/0195 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01); H10D 88/01 (2025.01);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a first transistor, located on the substrate; a second transistor, located above the first transistor; and a gate structure, the gate structure including a first gate layer and a second gate layer, which connected to each other, the first gate layer surrounding the first transistor and the second gate layer surrounding the second transistor; an extension direction of the first transistor and an extension direction of the second transistor are both perpendicular to the substrate.


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Zhang, Kui. (2025). Semiconductor structure and manufacturing method thereof (U.S. Patent No. 12302634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12302634

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