Method of manufacturing a semiconductor structure comprising forming an insulating material layer with gaps therein in isolation region and manufactured semiconductor structure

Abstract

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a plurality of channel pillars perpendicularly provided on the base; a plurality of parallel bit lines, each of the bit lines wrapping lower parts of one column of the channel pillars; and a plurality of parallel word lines, each of the word lines wrapping upper parts of one row of the channel pillars, where the word lines and the bit lines are perpendicular to each other on a same projection plane; an insulating material layer is formed around the channel pillars below the bit lines, between adjacent bit lines, around the channel pillars between the bit lines and the word lines, and between adjacent word lines, separately; and gaps are formed in at least one of the insulating material layers.