The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jan. 11, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Kui Zhang, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/8221 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 27/0688 (2013.01); H01L 27/092 (2013.01); H01L 29/41741 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01);
Abstract
The present disclosure provides a semiconductor device and a method for manufacturing a semiconductor device. Every two first wires of a first conductive layer of the semiconductor device have a common end, and every two second wires of a second conductive layer of the semiconductor device have a common end.
Quick Actions:
Zhang, Kui. (2024). Semiconductor device and method for manufacturing semiconductor device (U.S. Patent No. 12132047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12132047
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile