The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

May. 09, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Kui Zhang, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/7682 (2013.01); H01L 28/90 (2013.01); H01L 28/92 (2013.01); H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/318 (2023.02);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including a plurality of lower electrode pillars that are arranged at intervals; a dielectric layer, at least partially covering a sidewall of each of the lower electrode pillars; a first upper electrode, covering a surface of the dielectric layer; a first support layer, located above the plurality of lower electrode pillars, the dielectric layer, and the first upper electrode, wherein the first support layer at least exposes a peripheral region of a part of the first upper electrode.


Find Patent Forward Citations

Loading…