The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Feb. 28, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Kui Zhang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a manufacturing method are provided. The semiconductor structure includes: a substrate having a bit line extending along a first direction; a semiconductor channel located on the bit line; a semiconductor doping layer located on the side of the bit line, wherein the top surface of the semiconductor doping layer is connected to the semiconductor channel contact; a word line extending in the second direction, encircling part of the semiconductor channel, and the bottom surface of the word line is higher than the top surface of the bit line; a word line dielectric layer located between the word line and the semiconductor channel; an isolation layer located between the word line and the bit line and between the word line and the semiconductor doping layer. The device and method improve the prior weak electrical conductivity between the bit line structure and the active structure.