The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
May. 18, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Kui Zhang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments of the present disclosure relate to the field of semiconductors, and in particular to a method of manufacturing a semiconductor structure, a semiconductor structure and a memory. The method of manufacturing a semiconductor structure includes: forming a first semiconductor layer on a substrate, the first semiconductor layer including a first trench region and a to-be-doped region on two opposite sides of the first trench region; forming a word line, the word line surrounding a sidewall surface of a part of the first semiconductor layer in the first trench region, and at least a part of a projection of a part of the first semiconductor layer in the to-be-doped region on a surface of the substrate coinciding with a projection of the word line on the surface of the substrate; forming a doping body portion, the doping body portion including first dopant ions.