The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Feb. 08, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Kui Zhang, Hefei, CN;

Zhan Ying, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H10B 12/05 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a semiconductor base, a bit line and a word line. The semiconductor base includes a substrate and an isolation structure. The isolation structure is arranged above the substrate and configured to isolate a plurality of active regions from each other. The bit line is arranged in the substrate and connected to the plurality of active regions. The word line is arranged in the isolation structure, intersects with the plurality of active regions and surrounds the plurality of active regions. The substrate is a Silicon-On-Insulator (SOI) substrate.


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