The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Oct. 18, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/535 (2006.01); H01L 27/13 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/84 (2013.01); H01L 23/535 (2013.01); H01L 27/13 (2013.01);
Abstract
A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a semiconductor body, bit lines and word lines. The semiconductor body includes a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, part of each of the active regions being formed from the substrate. The bit lines are positioned in the substrate and are connected to the active regions. The word lines intersect with the active regions and surround the active regions. The substrate is Silicon On Insulator (SOI) substrate.