The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jul. 18, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Kui Zhang, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/63 (2025.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10D 30/63 (2025.01);
Abstract

A semiconductor structure and a forming method thereof are provided. The method for forming a semiconductor structure includes providing a base including a semiconductor substrate and a well region located on a surface of the semiconductor substrate, in which the well region includes a plurality of active pillar columns arranged at intervals along a first direction, and each of the active pillar columns includes a plurality of active pillars arranged at intervals along a second direction, in which the first direction is perpendicular to the second direction; forming a plurality of bit line trenches by etching at least the well region and a partial thickness of the semiconductor substrate at bottoms of the active pillars; and forming buried bit lines in the bit line trenches.


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Zhang, Kui. (2025). Method for forming buried bit lines in the bit line trenchs (U.S. Patent No. 12256531). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12256531

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