The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Nov. 08, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure includes a base and a conductive channel structure, in which the conductive channel structure includes a base and a conductive channel structure which includes a first conductive channel layer including a first conductive channel, and a first and a second doped regions respectively located at two ends of the first conductive channel, a second conductive channel layer including a second conductive channel, and a third and a fourth doped regions respectively located at two ends of the second conductive channel and a conductive buffer layer configured to reduce electrical interference between the first and the third doped regions; a first conductive layer in contact with the second doped region; a second conductive layer nested on the conductive channel structure and in contact with the first and the third doped regions; and a gate structure arranged around the first conductive channel and the second conductive channel.