Hefei, China

Xin Li

This inventor holds 23 USPTO granted patents and 2 published patent applications and 3 EPO patents, primarily in Semiconductor Technology. Top assignees: Changxin Memory Technologies, Inc., Anhui University, 2Nd Construction Co., Ltd of China Construction 5Th Engineering Bureau. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xin Li. Retrieved from https://idiyas.com/inventor/xin-li-1d2cxzo2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 95.7

 

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 35(Granted Patents)


Location History:

  • Hefei, CN (2016 - 2024)
  • Anhui, CN (2018 - 2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Transistor Unit
Integrated Circuit
Protection Ring
Semiconductor Structure
Sense Amplifier
Memory Cell
Electrostatic Protection
Programmable Memory
Anti-Fuse Memory
Human Body Safety Detector
Isogeometric Analysis
T-Spline Models
23 patents (USPTO):Explore Patents

Title: Innovations and Patents of Xin Li in Hefei, China

Introduction

Xin Li, a prolific inventor based in Hefei, China, has made significant contributions to the fields of construction and semiconductor technology. With a remarkable portfolio of 21 patents, Xin's work reflects a commitment to innovation and advancement in modern engineering.

Latest Patents

Xin Li's latest patents showcase his expertise in developing practical and efficient solutions. One of his notable inventions is a roof system that includes a roof body capable of forming either a flat or corrugated roof. This innovative roof system integrates a gutter system for effective water management, a skylight system to enhance natural lighting, and a pressure relief adjustment component, thereby ensuring stability and structural integrity. The roof is assembled using multiple modules fixed together with connecting plates and self-locking components, maximizing utilization and bearing capacity.

Another significant patent involves a semiconductor structure and its formation method. This structure features a base and a conductive channel that includes first and second conductive layers along with a conductive buffer layer. The design aims to reduce electrical interference while optimizing the performance of the semiconductor device. This invention is crucial for the advancement of electronics, enhancing the efficiency of electrical pathways.

Career Highlights

Throughout his career, Xin Li has had the opportunity to work with esteemed organizations, further honing his skills and knowledge. He has been associated with Changxin Memory Technologies, Inc., a leading company in memory technologies, and Anhui University, where he contributed to research and development initiatives. His work within these institutions has greatly influenced his inventive endeavors.

Collaborations

In his professional journey, Xin has collaborated with several talented individuals, including Zhan Ying and Chunyu Peng. These collaborations have not only enriched his research but have also led to the collective development of groundbreaking innovations.

Conclusion

Xin Li's contributions to the fields of construction and semiconductor technology highlight his innovative spirit and dedication to advancing modern engineering practices. With a growing portfolio of patents and a history of collaboration with prominent companies and individuals, Xin continues to pave the way for future breakthroughs in technology. His work not only enhances functionality but also reflects his commitment to creating more efficient and sustainable solutions in today's rapidly evolving technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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