The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 13, 2021
Anhui University, Anhui, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Wenjuan Lu, Hefei, CN;
Yangkuo Zhao, Hefei, CN;
Jun He, Hefei, CN;
Xin Li, Hefei, CN;
Zhan Ying, Hefei, CN;
Kanyu Cao, Hefei, CN;
Chunyu Peng, Hefei, CN;
Xiulong Wu, Hefei, CN;
Zhiting Lin, Hefei, CN;
Junning Chen, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
ANHUI UNIVERSITY, Anhui, CN;
Abstract
A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.