Junning Chen

Title: The Innovations of Junning Chen

Introduction

Junning Chen is a prominent inventor based in Hefei, China. He has made significant contributions to the field of memory technology, holding a total of nine patents. His work focuses on enhancing the efficiency and performance of sense amplifiers used in memory devices.

Latest Patents

One of Junning Chen's latest patents is titled "Sense amplifier, memory, and method for controlling sense amplifier." This invention includes an amplification module designed to amplify a voltage transmitted by a bit line or a reference bit line during the amplification stage. The first switch module controls the amplification module, ensuring it is disconnected from the reference bit line when performing a read operation for the bit line. This innovation aims to reduce the power consumption of the sense amplifier. Another notable patent is also titled "Sense amplifier, memory and method for controlling sense amplifier." This invention features an amplification module that reads data in a memory cell and a control module that is electrically connected to the amplification module. In the first offset compensation stage, the control module configures the amplification module to include a first inverter and a second inverter, while in the second offset compensation stage, it incorporates a current mirror structure.

Career Highlights

Junning Chen has worked with notable organizations such as Changxin Memory Technologies, Inc. and Anhui University. His experience in these institutions has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Junning Chen has collaborated with several professionals in his field, including Chunyu Peng and Wenjuan Lu. Their joint efforts have contributed to advancements in memory technology and the development of new inventions.

Conclusion

Junning Chen's contributions to the field of memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the efficiency and performance of memory devices, showcasing the importance of innovation in this area.