The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Dec. 25, 2020
Anhui University, Anhui, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Chunyu Peng, Anhui, CN;
Yangkuo Zhao, Anhui, CN;
Wenjuan Lu, Anhui, CN;
Xiulong Wu, Anhui, CN;
Zhiting Lin, Anhui, CN;
Junning Chen, Anhui, CN;
Xin Li, Anhui, CN;
Rumin Ji, Anhui, CN;
Jun He, Hefei, CN;
Zhan Ying, Anhui, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
ANHUI UNIVERSITY, Hefei, CN;
Abstract
The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.